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cha3667aqdg rohs compliant ref. : dscha3667aqdg0158 - 07 jun 10 1/16 specifica tions subject to change without notice united monolithic semiconductors s.a.s. route dpartementale 128 - bp46 - 91401 orsay cedex france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 7-20ghz medium power amplifier gaas monolithic microwave ic in smd package description the cha3667aqdg is a wide band monolithic medium power amplifier. it is designed for a wide range of applications, from military to commercial communication systems. the circuit is manufactured with a power- phemt process, 0.15m gate length, via hole through the substrate. it is esd protected on rf ports thanks to dc specific filter circuits. it is available in lead-free smd package. main features broadband performance 7-20ghz self-biased 23db gain @ 2.7db noise figure 20dbm output power @1dbcp dc power consumption, 175ma @ 4.2v 24l-qfn4x4 smd package msl1 vd rfin rfout vd rfin rfout main characteristics tamb = +25c, vd= 4.2v symbol parameter min typ max unit fop input frequency range 7 20 ghz g small signal gain 21 23 db nf noise figure 2.7 3.5 db p-1db output power at 1db gain compression 18.5 20 dbm id bias current 130 175 220 ma esd protections: electrostatic discharge sensitive device observe handling precautions! ums a3667a yyww
cha3667aqdg 7-20ghz amplifier ref. : dscha3667aqdg0158 - 07 jun 10 2/16 specifica tions subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 electrical characteristics tamb = +25c, vd= 4.2v symbol parameter min typ max unit fop operating frequency range 7 20 ghz g gain (7-8ghz) (8-19ghz) (19-20ghz) 19 21 19 20 23 20 db db db nf noise figure (7-18ghz) 2.7 3.5 db rlin input return loss (7-19.5ghz) (19.5-20ghz) -10 -8 -8 -6 db db rlout output return loss -10 -8 db oip3 output ip3 28 dbm p1db pout at 1db gain compression (7-13ghz) (13-20ghz) 20 21 dbm dbm isol reverse isolation 40 db vd drain bias voltage 4.2 v id drain bias current 130 175 220 ma these values are representative of on board measure ments as defined on the drawing in paragraph evaluation board.
7-20ghz amplifier cha3667aqdg ref.: dscha3667aqdg0158 - 07 jun 10 3/16 specificat ions subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 absolute maximum ratings (1) tamb = +25c symbol parameter values unit vd drain bias voltage 4.5v v id power supply quiescent current 240 ma pin rf input power (2) 3 dbm top operating temperature range -40 to +85 c tj junction temperature (3) 175 c tstg storage temperature range -55 to +125 c (1) operation of this device above anyone of these parameters may cause permanent damage. (2) duration<1s
cha3667aqdg 7-20ghz amplifier ref. : dscha3667aqdg0158 - 07 jun 10 4/16 specifica tions subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 device thermal performances all the figures given in this section are obtained assuming that the qfn device is cooled down only by conduction through the package thermal pad (no convection mode considered). the temperature is monitored at the package back-si de interface (tcase) as shown below. the system maximum temperature must be adjusted in order to guarantee that tcase remains below than the maximum value specified in t he next table. so, the system pcb must be designed to comply with this requirement. a derating must be applied on the dissipated power if the tcase temperature can not be maintained below than the maximum temperature speci fied (see the curve pdiss. max) in order to guarantee the nominal device life time (mt tf). recommanded max. junction temperature (tj max) : 167 c junction temperature absolute maximum rating : 175 c max. continuous dissipated power @ tcase= 85 c : 0.81 w => pdiss derating above tcase (1) = 85 c : 10 mw/c junction-case thermal resistance (rth j-c) (2) : <100 c/w min. package back side operating temperature (3) : -40 c max. package back side operating temperature (3) : 85 c min. storage temperature : -55 c max. storage temperature : 125 c (1) derating at junction temperature constant = tj max (2) rth j-c is calculated for a worst case where th e hotter junction of the mmic is considered. (3) tcase=package back side temperature measured un der the die-attach-pad (see the drawing below). 5.8 device thermal specification : cha3667aqdg 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 -50 -25 0 25 50 75 100 125 tcase (c ) pdiss. max. (w) pdiss. max. (w) tcase example of qfn 16l 3x3 back-side view, temperature reference point (tcase) location.
7-20ghz amplifier cha3667aqdg ref.: dscha3667aqdg0158 - 07 jun 10 5/16 specificat ions subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 typical package sij parameters tamb = +25c, vd= 4.2v, typical id=175ma freq s11 ph(s11) s21 ph(s21) s12 ph(s12) s22 ph(s22) ( ghz) (db) ( ) db ( ) db ( ) db ( ) 1 -1.6 91.1 -64.6 -77.9 -74.9 -11.4 -1.7 95.7 2 -1.2 12.0 -43.4 -51.5 -80.6 -71.0 -1.6 16.6 3 -1.0 -57.5 -24.6 -99.2 -65.2 138.5 -1.8 -58.8 4 -1.1 -126.1 3.1 143.8 -65.6 11.7 -6.5 -120.6 5 -4.3 135.4 16.3 5.1 -67.4 59.6 -8.6 -144.5 6 -16.0 -42.1 19.8 -122.8 -70.3 4.7 -9.6 -173.4 7 -12.7 -135.1 20.7 147.2 -74.9 173.9 -11.5 157.3 8 -13.2 -172.1 21.7 70.9 -61.5 94.7 -14.6 133.6 9 -15.4 167.2 22.3 2.8 -63.6 55.3 -18.9 122.4 10 -17.1 162.1 23.0 -62.5 -61.1 -4.2 -21.7 137.8 11 -16.2 155.7 23.3 -125.7 -63.3 -15.4 -19.7 141.6 12 -15.3 140.5 23.3 174.7 -69.4 -84.6 -19.8 124.6 13 -15.4 116.5 23.2 116.2 -66.5 140.1 -20.9 95.1 14 -16.4 93.2 22.8 61.6 -69.7 138.0 -27.5 33.8 15 -17.4 63.7 22.8 7.5 -60.5 161.0 -29.4 -74.4 16 -19.3 15.4 23.1 -46.7 -53.7 109.5 -22.8 -112.8 17 -18.0 -55.1 23.1 -103.7 -57.1 54.6 -20.4 -122.7 18 -13.3 -122.2 23.0 -163.7 -51.1 90.9 -17.0 -134.8 19 -9.1 -176.6 22.5 133.0 -48.0 48.6 -12.7 -149.2 20 -7.0 130.0 20.7 67.8 -47.3 13.1 -9.8 178.1 21 -6.6 81.5 18.1 6.9 -55.3 -22.0 -8.8 144.9 22 -6.9 39.1 15.1 -50.4 -58.1 -24.0 -8.2 111.5 23 -7.3 0.9 12.1 -105.2 -47.8 92.8 -7.8 78.6 24 -7.6 -34.0 8.8 -161.0 -44.6 29.3 -7.4 48.1 25 -6.7 -68.1 4.8 140.6 -46.8 -7.3 -6.6 16.8 26 -6.0 -117.3 -2.4 86.8 -45.4 -8.8 -6.4 -19.3 the sij measurement calibration planes are defined in the paragraph definition of the sij reference planes.
cha3667aqdg 7-20ghz amplifier ref. : dscha3667aqdg0158 - 07 jun 10 6/16 specifica tions subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 typical measured performances tamb = +25c, vd= 4.2v, typical id=175ma measurements in the package access plan , using the proposed land pattern & board, as defined in paragraph evaluation mother board:". s parameters versus frequency -25 -20 -15 -10 -5 0 5 10 15 20 25 1 3 5 7 9 11 13 15 17 19 21 23 25 freq ( ghz) gain & input / output return loss (db) s21 s11 s22 noise figure versus frequency (losses due to board have been removed) 0 1 2 3 4 5 6 7 8 9 10 5 7 9 11 13 15 17 19 21 frequency ( ghz) nf( db)
7-20ghz amplifier cha3667aqdg ref.: dscha3667aqdg0158 - 07 jun 10 7/16 specificat ions subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 typical measured performances tamb = +25c, vd= 4.2v, typical id=175ma measurements in the plan of the connectors , using the proposed land pattern & board, as defined in paragraph evaluation mother board:". ouput power & associated consumption id @ 1db compr ession 15 16 17 18 19 20 21 22 23 24 25 7 8 9 10 11 12 13 14 15 16 17 18 19 20 frequency ( ghz) p-1db (dbm) 120 140 160 180 200 220 240 260 280 consumption for p-1db ( ma) output ip3 versus single output power 16 18 20 22 24 26 28 30 32 34 36 38 40 2 4 6 8 10 12 14 16 18 single output power (dbm) output ip3 ( dbm) ip3 (7ghz & +25c) ip3 (8ghz & +25c) ip3 (10ghz & +25c) ip3 (14ghz & +25c) ip3 (18ghz & +25c) ip3 (20ghz & +25c)
cha3667aqdg 7-20ghz amplifier ref. : dscha3667aqdg0158 - 07 jun 10 8/16 specifica tions subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 typical measured performances in temperature tamb = -40c, +25c, +85c, vd= 4.2v, typical id=17 5ma measurements in the plan of the connectors , using the proposed land pattern & board, as defined in paragraph evaluation mother board:". linear gain versus frequency and temperature 9 11 13 15 17 19 21 23 25 27 29 5 7 9 11 13 15 17 19 21 frequency (ghz) gain (db) -40c +25c +85c reverse isolation versus frequency and temperature -80 -75 -70 -65 -60 -55 -50 -45 -40 -35 -30 5 7 9 11 13 15 17 19 21 frequency (ghz) reverse isolation(db) +25c +85c -40c
7-20ghz amplifier cha3667aqdg ref.: dscha3667aqdg0158 - 07 jun 10 9/16 specificat ions subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 noise figure versus frequency and temperature (losses due to board have been removed) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 5 7 9 11 13 15 17 19 21 frequency ( ghz) nf( db) +25c +85c -40c consumption versus temperature 160 165 170 175 180 185 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 temperature (c) consumption id (ma)
cha3667aqdg 7-20ghz amplifier ref. : dscha3667aqdg0158 - 07 jun 10 10/16 specific ations subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 pout @1db compresssion versus frequency and tempera ture 14 15 16 17 18 19 20 21 22 23 24 7 9 11 13 15 17 19 freq ( ghz) pout @ 1dbc (dbm) +25c +85c -40c gain and pout versus frequency and temperature @ 7g hz - 40c - 40c +25c +25c +85c +85c
7-20ghz amplifier cha3667aqdg ref.: dscha3667aqdg0158 - 07 jun 10 11/16 specifica tions subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 gain and pout versus frequency and temperature @ 16 ghz gain and pout versus frequency and temperature @ 20 ghz - 40c - 40c +25c +25c +85c +85c - 40c - 40c +25c +25c +85c +85c
cha3667aqdg 7-20ghz amplifier ref. : dscha3667aqdg0158 - 07 jun 10 12/16 specific ations subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 output ip3 versus single output power and temperatu re @ 7ghz 16 18 20 22 24 26 28 30 32 34 36 38 40 2 4 6 8 10 12 14 16 18 single output power (dbm) output ip3 (dbm) ip3 (7ghz & +25c) ip3 (7ghz & +85c) ip3 (7ghz & -40c) output ip3 versus single output power and temperatu re @ 20ghz 16 18 20 22 24 26 28 30 32 34 36 38 40 2 4 6 8 10 12 14 16 18 single output power (dbm) output ip3 (dbm) ip3 (20ghz & +25c) ip3 (20ghz &+ 85c) ip3 (20ghz & -40c)
7-20ghz amplifier cha3667aqdg ref.: dscha3667aqdg0158 - 07 jun 10 13/16 specifica tions subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 package outline (1) matt tin, lead free (green) 1- nc 13- nc units mm 2- nc 14- gnd from the standard jedec mo-220 3- gnd 15- rf out (vggd) 4- rf in 16- gnd 25- gnd 5- gnd 17- nc 6- nc 18- nc 7- nc 19- nc 8- nc 20- vd 9- nc 21- nc 10- nc 22- nc 11- nc 23- nc 12- nc 24- nc (1) the package outline drawing included to this data-s heet is given for indication. refer to the application note an0017 available at http://www.ums-gaas.com for exact package dimensions. it is strongly recommended to ground all pins marke d gnd through the pcb board. ensure that the pcb board is designed to provide the best possible ground to the package. a3667a
cha3667aqdg 7-20ghz amplifier ref. : dscha3667aqdg0158 - 07 jun 10 14/16 specific ations subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 definition of the sij reference planes the reference planes used for sij measurements given above are symmetrical from the symmetrical axis of the package (see drawing beside). the input and output reference planes are located at 3.18mm offset (input wise and output wise respectively) from this axis. then, the given sij parameters incorporate the land pattern of the evaluation motherboard recommended in paragraph "evaluation motherboard". 3.18 3.18 recommended package footprint refer to the application note an0017 available at http://www.ums-gaas.com for package foot print recommendations and exact package dimensions. smd mounting procedure the smd leadless package has been designed for high volume surface mount pcb assembly process. the dimensions and footprint requ ired for the pcb (motherboard) are given in the drawings above. recommended environmental management refer to the application note an0019 available at http://www.ums-gaas.com for environmental data on ums package products.
7-20ghz amplifier cha3667aqdg ref. : dscha3667aqdg0158 - 07 jun 10 15/16 specifications subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 notes due to esd protection circuits, rfin and rfout are dc grounded and an external capacitance might be requested to isolate the produ ct from external voltage that could be present on the rf accesses. vd rfin rfout vd rfin rfout refer to the application note an0020 available at http://www.ums-gaas.com for esd sensitivity and handling recommendations for the um s package products. vd
cha3667aqdg 7-20ghz amplifier ref. : dscha3667aqdg0158 - 07 jun 10 16/16 specific ations subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 evaluation mother board: compatible with the proposed footprint. based on typically ro4003 / 8mils or equivalent. using a microstrip to coplanar transition to acces s the package. recommended for the implementation of this product on a module board. decoupling capacitors of 10nf 10% are recommended for all dc accesses. (see application note an0017 for details). ordering information qfn 4x4 rohs compliant package: cha3667aqdg/xy stick: xy = 20 tape & reel: xy = 21 information furnished is believed to be accurate an d reliable. however united monolithic semiconductors s.a.s. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by impli cation or otherwise under any patent or patent rights of united monolithic semiconductors s.a.s. . specifications mentioned in this publication are subject to change without notice. this publication supersedes and re places all information previously supplied. united monolithic semiconductors s.a.s. products are not authorised for use as critical components in life support devices or s ystems without express written approval from united monolithic semiconductors s.a.s.

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